Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.

特性 Features

□ Low threshold

□ High input impedance

□ Low input capacitance

□ Fast switching speeds

□ Free from secondary breakdown

□ Low input and output leakage

□ Complementary N- and P-channel devices

Applications

□ Logic level interfaces

□ Solid state relays

□ Linear Amplifiers

□ Power Management

□ Analog switches

□ Telecom switches