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首頁(yè) >TP2104N3>規(guī)格書(shū)列表

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TP2104N3

P-Channel Enhancement-Mode Vertical DMOS FETs

GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighin

SUTEX

Supertex, Inc

TP2104N3

P-Channel Enhancement-Mode Vertical DMOS FETs; ? Free from secondary breakdown\n? Low power drive requirement\n? Ease of paralleling\n? Low CISS and fast switching speeds\n? Excellent thermal stability\n? Integral Source-Drain diode\n? High input impedance and high gain\n? Complementary N- and P-channel devicesApplications\n? Logic level interfaces – ideal for TTL and CMOS\n? Solid state relays\n? Battery operated systems\n? Photo voltaic drives\n? Analog switches\n? General purpose line drivers\n? Telecom switches;

Advanced DMOS Technology\nThese enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.\nSupertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

TP2104N3-G

P-Channel Enhancement Mode Vertical DMOS FETs

GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighin

SUTEX

Supertex, Inc

TP2104N3-G

P-Channel Enhancement Mode Vertical DMOS FETs

GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighin

SUTEX

Supertex, Inc

詳細(xì)參數(shù)

  • 型號(hào)：

    TP2104N3

  • 功能描述：

    MOSFET 40V 6Ohm

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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SUP
24+
原廠封裝
3050
原裝現(xiàn)貨假一罰十
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SUPERTEX
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
SUPERTEX
24+
NA/
3961
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 詢價(jià)
SUPERTEX
24+
TO-92
4820
只做原裝正品
 詢價(jià)
Microchip
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
MICROCHIP/微芯
24+
NA
2000
原裝現(xiàn)貨,專業(yè)配單專家
 詢價(jià)
Microchip
1940+
N/A
523
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MICROCHIP(美國(guó)微芯)
2447
TO-92-3
31500
2000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
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MICROCHIP
1809+
TO-92-3
3675
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MICROCHIP(美國(guó)微芯)
2021+
TO-92-3
499
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更多TP2104N3供應(yīng)商 更新時(shí)間2025-7-29 13:30:00

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