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首頁(yè)>TO-263AB>規(guī)格書詳情

TO-263AB數(shù)據(jù)手冊(cè)Renesas中文資料規(guī)格書

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廠商型號(hào)

TO-263AB

功能描述

5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

制造商

Renesas Renesas Technology Corp

中文名稱

瑞薩 瑞薩科技有限公司

數(shù)據(jù)手冊(cè)

下載地址下載地址二

更新時(shí)間

2025-8-18 18:16:00

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TO-263AB規(guī)格書詳情

描述 Description

The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

特性 Features

? 5.3A, 1200V, TC = 25°C
? 1200V Switching SOA Capability
? Typical EOFF. . . . . . . . . . . . . . . . . . . 120μJ at TJ = 150°C
? Short Circuit Rating
? Low Conduction Loss
? Temperature Compensating SABER? Model
?? Thermal Impedance SPICE Model www.intersil.com/
? Related Literature
?? - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

技術(shù)參數(shù)

  • 型號(hào):

    TO-263AB

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    High-Voltage Trench MOS Barrier Schottky Rectifier

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