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TN2640N3中文資料SUTEX數(shù)據(jù)手冊PDF規(guī)格書

TN2640N3
廠商型號

TN2640N3

功能描述

N-Channel Enhancement-Mode Vertical DMOS FETs

文件大小

461.12 Kbytes

頁面數(shù)量

4

生產(chǎn)廠商

SUTEX

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-8 13:36:00

人工找貨

TN2640N3價格和庫存,歡迎聯(lián)系客服免費人工找貨

TN2640N3規(guī)格書詳情

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.

特性 Features

? Low threshold — 2.0V max.

? High input impedance

? Low input capacitance

? Fast switching speeds

? Low on resistance

? Free from secondary breakdown

? Low input and output leakage

? Complementary N- and P-channel devices

Applications

? Logic level interfaces – ideal for TTL and CMOS

? Solid state relays

? Battery operated systems

? Photo voltaic drives

? Analog switches

? General purpose line drivers

? Telecom switches

產(chǎn)品屬性

  • 型號:

    TN2640N3

  • 功能描述:

    MOSFET 400V 5Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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