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EP7309-IBZ

High-performance,Low-power,System-on-chipwithEnhancedDigitalAudioInterface

EP7309-IR

High-performance,Low-power,System-on-chipwithEnhancedDigitalAudioInterface

EP7309-IR-C

HIGHPERFORMANCELOWPOWERSYSTEMONCHIPENHANCEDDIGITALAUDIOINTERFACE

OVERVIEW TheMaverick?EP7309isdesignedforultra-low-powerapplicationssuchasdigitalmusicplayers,internetappliances,smartcellularphonesoranyhand-helddevicethatfeaturestheaddedcapabilityofdigitalaudiodecompression.Thecore-logicfunctionalityofthedeviceisbuiltaroun

EP7309-IV-C

HIGHPERFORMANCELOWPOWERSYSTEMONCHIPENHANCEDDIGITALAUDIOINTERFACE

OVERVIEW TheMaverick?EP7309isdesignedforultra-low-powerapplicationssuchasdigitalmusicplayers,internetappliances,smartcellularphonesoranyhand-helddevicethatfeaturestheaddedcapabilityofdigitalaudiodecompression.Thecore-logicfunctionalityofthedeviceisbuiltaroun

IRF7309

GENERATIONVTECHNOLOGY

IRF7309

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETPowerMOSFETsarewellknown

IRF7309

DualNPChannelMOSFET

Industry-standardpinoutSO-8Package CompatiblewithExistingSurfaceMountTechniques
VDS(V)=30V
RDS(ON)70m(VGS=2.7V)
RDS(ON)50m(VGS=4.5V)
VDS(V)=-30V
RDS(ON)100m(VGS=4.5V)
RDS(ON)140m(VGS=2.7V) Features

N-Ch: P-Ch:

IRF7309

DualNPChannelMOSFET

Features N-Ch: VDS(V)=30V RDS(ON)

IRF7309IPBF

HEXFETPowerMOSFET

IRF7309PBF

GENERATIONVTECHNOLOGY