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TIP116

SILICON DARLINGTON POWER TRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. NPNcomplementsareTIP110-111-112 CompliancetoRoHS.

TIP116

Silicon Power darlington Complementary transistors

TIP116

Monolithic Construction With Built In Base- Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors ?HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-1A(Min.) ?LowCollector-EmitterSaturationVoltage ?IndustrialUse ?ComplementarytoTIP110/111/112

TIP116

Silicon PNP Darlington Power Transistors

DESCRIPTION ?WithTO-220Cpackage ?DARLINGTON ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?ComplementtotypeTIP110/111/112 APPLICATIONS ?Forindustrialuse

TIP116

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP110,TIP111andTIP112 ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof500at4V,2A

TIP116

Plastic Medium-Power Complementary Silicon Transistors

PlasticMedium-PowerComplementarySiliconTransistors Designedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain? hFE=2500(Typ)@IC =1.0Adc ?Collector?EmitterSustainingVoltage?@30mAdc VCEO(sus)=60Vdc(Min)

TIP116

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

TIP116

POWER TRANSISTORS(2.0A,60-100V,50W)

TIP116

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

TIP116

PNP Epitaxial Silicon Darlington Transistors

Features ?HighDCCurrentGain:hFE=1000@VCE=4.0V,IC=1.0A(Min.) ?LowCollector-EmitterSaturationVoltage ?ComplementarytoTIP110/111/112 ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatRoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating