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TGF1350-SCC中文資料TRIQUINT數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
TGF1350-SCC |
| 功能描述 | Discrete MESFET |
| 文件大小 |
467.76 Kbytes |
| 頁(yè)面數(shù)量 |
5 頁(yè) |
| 生產(chǎn)廠商 | TRIQUINT |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-8-10 9:30:00 |
| 人工找貨 | TGF1350-SCC價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
TGF1350-SCC規(guī)格書(shū)詳情
描述 Description
The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility with thermocompression and thermosonic compatibility wire-bonding processes. The TGF1350-SCC is readily assembled using automated equipment. Die attach should be accomplished with conductive epoxy only. Eutectic attach is not recommended .
Key Features and Performance
? 0.5 um x 300 um FET
? 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz
? 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz
? All-gold Metallization for High Reliability
? Recessed Gate Structure
產(chǎn)品屬性
- 型號(hào)：
TGF1350-SCC
- 功能描述：
射頻GaAs晶體管 DC-18.0GHz 0.3mm MESFET
- RoHS：
否
- 制造商：
TriQuint Semiconductor
- 技術(shù)類型：
pHEMT
- 頻率：
500 MHz to 3 GHz
- 增益：
10 dB
- 噪聲系數(shù)：
正向跨導(dǎo)
- gFS（最大值/最小值）：
4 S 漏源電壓
- 閘/源擊穿電壓：
- 8 V
- 漏極連續(xù)電流：
3 A
- 最大工作溫度：
+ 150 C
- 功率耗散：
10 W
