描述 Description

Qorvo's TGA2575-TS is a wideband power amplifier fabricated on Qorvo's production-released 0.15 um power pHEMT process. Operating from 32 to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over most of the band.
The TGA2575-TS is a 2 mil thick, GaAs die mounted on a 10 mil thick CuMoCu carrier. This provides the customer a known good die attach to assist in thermal management and provide easier handling.
Fully matched to 50 ohms, ROHS compliant and with integrated DC blocking caps on both I/O ports, the TGA2575-TS is ideally suited to support both commercial and defense related opportunities.
The TGA2575-TS is 100% DC and RF tested on-wafer to ensure compliance to performance specifications
Lead-free and RoHS compliant.

特性 Features

? Frequency range: 32.0 to 38.0 GHz
? Power: 35.5 dBm Psat
? PAE: 22%
? Gain: 19 dB
? Return loss: 12 dB
? Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V typical
? Dimensions: 5.31 x 8.92 x .49 mm

應(yīng)用 Application

? Communication Systems
? Military Radar
? EW Signal Jammers
? Repeaters / Boosters / DAS