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AM2319

MOSFETP-CHANNELENHANCEMENTMODEMOSFET

DESCRIPTION AM2319isavailableinaSOT-23Spackage. FEATURES ?-40V/-3A, RDS(ON)=80mΩ(max.)@VGS=-10V RDS(ON)=120mΩ(max.)@VGS=-4.5V ?ReliableandRugged ?LeadFreeandGreenDevicesAvailable (RoHSCompliant) ?AvailableinaSOT-23Spackage. APPLICATION ?LoadSwitch. ?

AM2319A

MOSFETP-CHANNELENHANCEMENTMODEMOSFET

FEATURES ?FastSwitching ?1.8VLowgatedriveapplications ?Improveddv/dtcapability ?20V/4.2A, RDS(ON)ON)=35mΩ(Typ)@VGS=10V RDS(ON)ON)=43mΩ(Typ)@VGS=4.5V RDS(ON)ON)=57mΩ(Typ)@VGS=2.5V RDS(ON)ON)=80mΩ(Typ)@VGS=1.8V ?ReliableandRugged

AM2319P

P-ChannelLogicLevelMOSFET

P-ChannelLogicLevelMOSFET TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarevoltagecontrolsmallsignalswitch,power

AMS2319

SuperhighdensitycelldesignforextremelylowRDS(ON)

AN2319

Usingthe64-bitUIDincontactlessRFIDapplications

AP2319GN-HF

SimpleDriveRequirement,SmallPackageOutline

C-2319

InsulKrimp??FullyInsulatedPiggybackQuickDisconnect,Tab6.35mm(.250)by0.81mm(.032),10-12AWG,BlueInsulator,Tape

CM2319

T-13/4Bi-PinBase(.125)

T-13/4Bi-PinBase(.125)

CM2319

T-13/4Bi-PinBase(.125)

CPB2319-P

PiezoBuzzer(DC)