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FDD3672

N-channelEnhancementModePowerMOSFET

Features ?VDS=100V,ID=40A RDS(ON)

FDD3672-TP

N-ChannelMOSFET

Application| ?ReverseBatteryprotection| Loadswitch ?Powermanagement ?PWMApplication|

FDMS3672

N-ChannelUltraFETTrenchMOSFET100V,22A,23mohm

GeneralDescription UItraFETdevicescombinecharacteristicsthatenablebenchmarkefficiencyinpowerconversionapplications.OptimizedforrDS(on),lowESR,lowtotalandMillergatecharge,thesedevicesareidealforhighfrequencyDCtoDCconverters. Features ■MaxrDS(on)=23m?atVGS

FDP3672

iscN-ChannelMOSFETTransistor

FDP3672

N-ChannelPowerTrenchMOSFET105V,41A,33m?

Features ?rDS(ON)=25m?(Typ.),VGS=10V,ID=41A ?Qg(tot)=28nC(Typ.),VGS=10V ?LowMillerCharge ?LowQRRBodyDiode ?Optimizedefficiencyathighfrequencies ?UISCapability(SinglePulseandRepetitivePulse) ?QualifiedtoAECQ101 Applications ?DC/DCconvertersandOff

FDS3672

N-ChannelPowerTrenchMOSFET100V,7.5A,22m?

Features ?rDS(ON)=19m?(Typ.),VGS=10V,ID=7.5A ?Qg(tot)=28nC(Typ.),VGS=10V ?LowMillerCharge ?LowQRRBodyDiode ?Optimizedefficiencyathighfrequencies ?UISCapability(SinglePulseandRepetitivePulse) Applications ?DC/DCconvertersandOff-LineUPS ?Distributed

FDS3672

N-ChannelMOSFET

Features ?Qg(tot)=28nC(Typ.),VGS=10V ?RDS(ON)=23mΩ,VGS=10V,ID=7.5A ?LowMillerCharge ?LowQRRBodyDiode ?Optimizedefficiencyathighfrequencies ?UISCapability(SinglePulseandRepetitivePulse)

FDS3672-NL

N-Channel100V(D-S)MOSFET

FDS3672-TP

N-Channel100-V(D-S)MOSFET

Application LEDBacklighting SynchronousRectifiersforSMPS oPowermanagement ?PWMApplication

INN3672C

Off-LineCV/CCQRFlybackSwitcherICwithIntegratedPrimarySwitch,SynchronousRectificationandFluxLinkFeedback

HighlyIntegrated,CompactFootprint ?Veryhighefficiencyacrossfullloadrange ?Incorporatesamulti-modeQuasi-Resonant(QR)/CCMflyback controller,high-voltageswitch,secondary-sidesensingandsynchronous rectificationdriver ?Excellentmulti-outputcrossregulationwithweighted