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TC51WHM516AXBN70中文資料東芝數(shù)據(jù)手冊PDF規(guī)格書
TC51WHM516AXBN70規(guī)格書詳情
DESCRIPTION
The TC51WHM516AXBN is a 33,554,432-bit pseudo static random access memory(PSRAM) organized as 2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high density, high speed and low power. The device operates single power supply. The device also features SRAM-like W/R timing whereby the device is controlled by CE1 , OE , and WE on asynchronous. The device has the page access operation. Page size is 8 words. The device also supports deep power-down mode, realizing low-power standby.
FEATURES
? Organized as 2,097,152 words by 16 bits
? Single power supply voltage of 2.6 to 3.3 V
? Direct TTL compatibility for all inputs and outputs
? Deep power-down mode: Memory cell data invalid
? Page operation mode: Page read operation by 8 words
? Logic compatible with SRAM R/W ( WE ) pin
? Standby current
Standby 70 μA
Deep power-down standby 5 μA
產(chǎn)品屬性
- 型號:
TC51WHM516AXBN70
- 功能描述:
IC PSRAM 32MBIT 70NS 48TFBGA
- RoHS:
否
- 類別:
集成電路(IC) >> 存儲器
- 系列:
-
- 標(biāo)準(zhǔn)包裝:
576
- 系列:
- 格式 -
- 存儲器:
閃存
- 存儲器類型:
閃存 - NAND
- 存儲容量:
512M(64M x 8)
- 速度:
-
- 接口:
并聯(lián)
- 電源電壓:
2.7 V ~ 3.6 V
- 工作溫度:
-40°C ~ 85°C
- 封裝/外殼:
48-TFSOP(0.724,18.40mm 寬)
- 供應(yīng)商設(shè)備封裝:
48-TSOP
- 包裝:
托盤
- 其它名稱:
497-5040
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TOS |
06+ |
BGA48 |
129 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
TOSHIBA/東芝 |
24+ |
BGA |
8540 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
TOSHIBA |
08+ |
BGA |
4200 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
TOS |
BGA |
9500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
只做原裝 |
24+ |
FBGA48 |
36520 |
一級代理/放心采購 |
詢價 | ||
東芝 |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
TOS |
25+23+ |
BGA |
7850 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
TOS |
23+ |
BGA |
65480 |
詢價 | |||
TOSHIBA |
2024+ |
QFP |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
TOSHIBA |
22+ |
BGA |
3000 |
原裝正品,支持實單 |
詢價 |