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4025

Pulsegenerator

FESTOFesto Corporation.

費(fèi)斯托

ACTF4025

low-loss,compact,andeconomicalsurface-acoustic-wave(SAW)

ACT

Advanced Crystal Technology

ACTF4025

SAWFilter

ACT

Advanced Crystal Technology

AN4025

ImplementingaGlucometerandBloodPressureMonitorMedicalDevices

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

AP4025

HighPerformanceIREnhancedP-Typesiliconp-i-nPhotodiodes

Features OptimizedResponsivityforOperation at1064nm. GuardRingConstruction AntireflectionCoated HermeticallySealedPackage WideRangeofOperatingVoltage(0to-200V) Applications Nd:YAGLaserDetection OpticalCommunications IntrusionAlarmSystems ProcessControlInstrument

ETCList of Unclassifed Manufacturers

未分類制造商

APT4025AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT4025BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT4025BN

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT4025BNR

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT4025HN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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