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TMR1202T

MicroAmpereHighFrequencyResponseBipolarLatchingMagneticSwitchSensor

Description TMR1202/TMR1208isabipolarlatchingmagnetic switchintegratedthetunnelmagnetoresistance (TMR)magneticsensorandCMOScircuitry,which isabletodetectthechangeofmagneticfieldand outputhighandlowvoltagesignalsforhighaccuracy positiondetection. UnlikeHall/

MULTIDIMENSIONMultiDimension Technology Co.,Ltd.

多維科技江蘇多維科技有限公司

TPLD1202

TPLD1202ProgrammableLogicDevicewithI2C/SPIand10-GPIO

1Features ?Operatingcharacteristics –Extendedtemperaturerange:-40°Cto125°C –Widesupplyvoltagerange:1.71Vto5.5V ?Configurablemacro-cells –2-,3-,and4-bitlookuptables –D-typeflip-flopsandlatcheswithandwithout reset/setoption –8-bitshiftregister –16-bitpat

TITexas Instruments

德州儀器美國德州儀器公司

TPLD1202

TPLD1202-Q1AutomotiveProgrammableLogicDevicewithI2C/SPIand10-GPIO

1Features ?Operatingcharacteristics –Extendedtemperaturerange:-40°Cto125°C –Widesupplyvoltagerange:1.71Vto5.5V –Qualifiedforautomotiveapplications ?Configurablemacro-cells –2-,3-,and4-bitlookuptables –D-typeflip-flopsandlatcheswithandwithout reset/setopt

TITexas Instruments

德州儀器美國德州儀器公司

U1202

SurgeProtection

EATONEaton All Rights Reserved.

伊頓伊頓公司

VACR1202

AluminumHousedCompactWirewoundResistor

FEATURES ?Powerratingupto500W ?Highoverloadcapacity ?ProtectionIP20orIP65 ?Enhancedhumidityprotection ?Completehousedconstruction ?Multipleconstructionforhigherpowerrating ?Heatsinkmounting ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導體

VBE1202

N-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

VBE1202

N-Channel20-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

VBM1202M

PowerMOSFET

FEATURES ?Surfacemount ?Low-profilethrough-hole ?Availableintapeandreel ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

VBM1202M

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

VBM1202N

N-Channel200V(D-S)175°CMOSFET

FEATURES ?ThunderFET?powerMOSFET ?Maximum175°Cjunctiontemperature ?100RgandUIStested APPLICATIONS ?Powersupplies: -Uninterruptiblepowersupplies -AC/DCswitch-modepowersupplies -Lighting ?Synchronousrectification ?DC/DCconverter ?Motordriveswitch ?DC/ACin

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

技術(shù)參數(shù)

  • Pass Band(MHz):

    0.15

  • Insertion Loss(d B Max):

    8.5

  • Package(mm):

    13.3x6.5x1.85

  • Application:

    Base Station

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更多TB1202A供應商 更新時間2025-7-28 9:18:00