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首頁>T1G4005528-FS-EVB1>規(guī)格書詳情

T1G4005528-FS-EVB1中文資料TRIQUINT數(shù)據(jù)手冊PDF規(guī)格書

T1G4005528-FS-EVB1
廠商型號

T1G4005528-FS-EVB1

功能描述

55W, 28V, DC ??3.5GHz, GaN RF Power Transistor

文件大小

830.91 Kbytes

頁面數(shù)量

4

生產(chǎn)廠商

TRIQUINT

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-10 10:51:00

人工找貨

T1G4005528-FS-EVB1價格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

T1G4005528-FS-EVB1規(guī)格書詳情

General Description

The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven 0.25um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Product Features

? Frequency Range: DC to 3.5 GHz

? Linear Gain: >15 dB at 3.5 GHz

? Operating Voltage: 28 V

? Output Power (P3dB): 55 W at 3.5 GHz

? Lead-free and RoHS compliant

Applications

? Military radar

? Civilian radar

? Professional and military radio communications

? Test instrumentation

? Avionics

? Wideband or narrowband amplifiers

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