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T100

型號：2SB1181；Power Transistor

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=?80V,IC=?1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

T100

型號：2SB1188；Package：MPT3；Medium power Transistor(-32V, -2A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor

T100

型號：2SB1189；Package：MPT3；Medium power transistor (-80V, -0.7A)

Features 1)Highbreakdownvoltage,BVCEO=-80V,andhighcurrent,IC=-0.7A. 2)Complementsthe2SB1767/2SB1859/2SB1200F. Features 1)Highbreakdownvoltage,BVCEO=80V,andhighcurrent,IC=0.7A. 2)Complementsthe2SB1189/2SB1238/2SB889F.

T100

型號：2SB1386；Package：MPT3；Low Frequency Transistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

T100

型號：2SB1580；Package：MPT3；Power Transistor (−100V , −2A)

Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SD2195/2SD1980.

T100

型號：2SB1644；Package：PSD3；Power Transistor (?80V, ?4A)

Features 1)Lowsaturationvoltage. (Typ.VCE(sat)=?0.5VatIC/IB=?3A/?0.3A) 2)ExcellentDCcurrentgaincharacteristics.

T100

型號：2SC4132；Package：MPT3；Power Transistor (120V, 1.5A)

Features 1)Highbreakdownvoltage.(BVCEO=120V) 2)Lowcollectoroutputcapacitance.(Typ.20pFatVCB=10V) 3)Hightransitionfrequency.(fT=80MHz) 4)Complementsthe2SB1236.

T100

型號：2SD2167；Package：MPT3；Power Transistor (60V, 3A)

T100

型號：2SD2167；Package：MPT3；Power Transistor (31/-4V, 2A)

T100

型號：2SK2103；Package：MPT3；Small switching (30V, 2A)

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive(4V). 5)Easilydesigneddrivecircuits. 6)Easytouseinparallel.