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T100

型號：2SK2463；Package：MPT3；Small switching (60V, 2A)

●Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive(4V). 5)Easilydesigneddrivecircuits. 6)Easytoparallel.

T100

型號：2SK3065；Package：MPT3；Small switching (60V, 2A)

Features 1)Lowonresistance. 2)High-speedswitching. 3)Optimumforapocketresourceetc.becauseofundervoltageactuation(2.5Vactuation). 4)Drivingcircuitiseasy. 5)Easytouseparallel. 6)Itisstrongtoanelectrostaticdischarge. Structure SiliconN-channel MOSFETt

T106

型號：BC848BW；Package：UMT3；NPN General Purpose Transistor

Features 1)BVCEOminimumis30V(IC=1mA) 2)ComplementstheBC858B/BC858BW.

T1032LJ

型號：DMHT10H032LFJ-13；Package：V-DFN5045-12；100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE

Features ?ThermallyEfficientPackage–CoolerRunningApplications ?HighConversionEfficiency ?LowRDS(ON)–MinimizesOn-StateLosses ?LowInputCapacitance ?FastSwitchingSpeed ?100UnclampedInductiveSwitching(UIS)TestinProduction– EnsuresMoreReliableandRobustEndAppl

T10H09LS

型號：DMT10H009LSS-13；Package：SO-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))yetmaintainsuperiorswitchingperformance,makingitideal forhigh-efficiencypowermanagementapplications. ?HighFrequencySwitching ?SynchronousRectification ?DC-DCConverters Feat

T10H09SS

型號：DMT10H009SSS-13；Package：SO-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

FeaturesandBenefits ?HighConversionEfficiency ?LowRDS(ON)—MinimizesOn-StateLosses ?LowInputCapacitance ?FastSwitchingSpeed ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFET

T1010LSQ

型號：DMT10H010LSSQ-13；Package：SO-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsofautomotiveapplications.ItisqualifiedtoAEC-Q101,supportedbyaPPAPandisidealforusein: Backlighting Powermanagementfunctions DC-DCconverters FeaturesandBenefits ?100UnclampedInduc

T106

型號：DTA144TUA；Package：UMT3；Digital transistors (built in resistor)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). 2)Thebiasresistorsconsistofthin-filmresistorswithcompleteisolationtoallowpositivebiasingoftheinput.Theyalsohavetheadvant

T106

型號：DTA144WUA；Package：UMT3；Digital transistors (built-in resistors)

Features 1)Built-InBiasingResistors 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Thebiasresistorsconsistofthin-filmresistors withcompleteisolationtoallownegativebiasing

T106

型號：DTC113ZUA；Package：UMT3；Digital transistors (built-in resistors)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). 2)Eachbiasresistorisathin-filmresistor.Sincetheyarecompletelyinsulated,theinputcanbenegativelybiased.Theinsulationalsoel