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SY8101DEBC

High Efficiency 400kHz, 0.6A/1A/1.5A/2A, 16V Input Synchronous Step Down Regulator; ? Low RDS(ON) for internal switches (top/bottom)\r\n ο SY8101A: 300/200 m?, 0.6A\r\n ο SY8101B: 200/150 m?, 1A\r\n ο SY8101C: 150/120 m?, 1.5A\r\n ο SY8101D: 120/90 m?, 2A\r\n? 4-15V input voltage range\r\n? 400kHz switching frequency\r\n? Internal softstart limits the inrush current\r\n? 2% 0.6V reference\r\n? RoHS Compliant and Halogen Free\r\n? Compact package: SSOT23 6 pin;

The SY8101A, SY8101B, SY8101C and SY8101D are high efficiency 400kHz synchronous step-down DCDC converters capable of delivering 0.6A, 1A, 1.5A, 2A output currents, respectively. SY8101A/B/C/D operate over a wide input voltage range from 4V to 15V and integrate main switch and synchronous switch with very low RDS(ON) to minimize the conduction loss.\r\n\r\n Low output voltage ripple and small external inductor and capacitor sizes are achieved with 400kHz switching frequency. \r

TPCF8101

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

NotebookPCApplications PortableEquipmentApplications ?Lowdrain-sourceONresistance:RDS(ON)=22m?(typ.) ?Highforwardtransferadmittance:|Yfs|=14S(typ.) ?Lowleakagecurrent:IDSS=?10μA(max)(VDS=?12V) ?Enhancementmodel:Vth=?0.5to?1.2V

TPCF8101

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCF8101

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

TPCP8101

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCP8101

TOSHIBAFieldEffectTransistorSiliconP-ChannelMOSType(U-MOSIII)

NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=24mΩ(typ.) ?Highforwardtransferadmittance:|Yfs|=14S(typ.) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-20V) ?Enhancementmo

TPCS8101

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSII)

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs ●Smallfootprintduetosmallandthinpackage ●Lowdrain-sourceONresistance:RDS(ON)=15m?(typ.) ●Highforwardtransferadmittance:|Yfs|=12S(typ.) ●Lowleakagecurrent:IDSS=?10μA(max)(VDS=?3

TPIC8101

KNOCKSENSORINTERFACE

TPIC8101

KNOCKSENSORINTERFACE

TPIC8101DW

KNOCKSENSORINTERFACE