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SWN7N65DA

Marking：SW7N65DA；Package：TO-251N；N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET

Features ?Highruggedness ?LowRDS(ON)(Typ1.4Ω)@VGS=10V ?LowGateCharge(Typ25nC) ?Improveddv/dtCapability ?100AvalancheTested ?Application:LED,Charge,PCPower

SWP055R06E7T

Marking：SW055R06E7T；Package：TO-220；N-channel Enhanced mode TO-220 MOSFET

Features ?Highruggedness ?LowRDS(ON)(Typ5.2mΩ)@VGS=10V ?LowGateCharge(Typ94nC) ?Improveddv/dtCapability ?100AvalancheTested ?Application:SynchronousRectification, LiBatteryProtectBoard,Inverter

SWP055R68E7T

Marking：SW055R68E7T；Package：TO-220；N-channel Enhanced mode TO-220/TO-263 MOSFET

Features ? Highruggedness ? LowRDS(ON)(Typ5.6mΩ)@VGS=10V ? LowGateCharge(Typ94nC) ? Improveddv/dtCapability ? 100AvalancheTested ? Application:SynchronousRectification,LiBatteryProtectBoard,Inverter

SWP058R72E7T

Marking：SW058R72E7T；Package：TO-220；N-channel Enhanced mode TO-220 MOSFET

Features ? Highruggedness ? LowRDS(ON)(Typ6.3mΩ)@VGS=10V ? LowGateCharge(Typ107nC) ? Improveddv/dtCapability ? 100AvalancheTested ? Application:SynchronousRectification,LiBatteryProtectBoard,Inverter

SWP068R08ET

Marking：SW068R08ET；Package：TO-220；N-channel Enhanced mode TO-220/TO-263 MOSFET

Features ? Highruggedness ? LowRDS(ON)(Typ7.1mΩ)@VGS=10V ? LowGateCharge(Typ59nC) ? Improveddv/dtCapability ? 100AvalancheTested ? Application:SynchronousRectification,LiBatteryProtectBoard,Inverter GeneralDescription ThispowerMOSFETisproducedwithadvancedtec

SWT22N65D

Marking：SW22N65D；Package：TO-247；N-channel Enhanced mode TO-247 MOSFETS

Features ? Highruggedness ? LowRDS(ON)(Typ0.22Ω)@VGS=10V ? LowGateCharge(Typ123nC) ? Improveddv/dtCapability ? 100AvalancheTested ? Application:LED,Charger,PCPower

SWT88N60K2

Marking：SW88N60K2；Package：TO-247；N-channel Enhanced mode TO-247 MOSFET

Features ?Highruggedness ?LowRDS(ON)(Typ24mΩ)@VGS=10V ?LowGateCharge(Typ188nC) ?Improveddv/dtCapability ?100AvalancheTested ?Application:Solar/PVinverter、Servicer、 Telecom、PCpower、UPS、EV-charger GeneralDescription ThispowerMOSFETisproducedwithsuperjunctiona

XSM6K336NW

Marking：SWI；Package：DFN2020B；MOSFETs Silicon N-Channel MOS

Applications ?PowerManagementSwitches ?DC-DCConverters Features (1)4.5Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=95mΩ(max)(@VGS=10V) RDS(ON)=140mΩ(max)(@VGS=4.5V)

XSM6K361NW

Marking：SWT；Package：DFN2020B；MOSFETs Silicon N-channel MOS

Applications ?PowerManagementSwitches ?DC-DCConverters Features (1)4.5Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=65mΩ(typ.)(@VGS=4.5V) RDS(ON)=51mΩ(typ.)(@VGS=10V)

XSM6K376NW

Marking：SWD；Package：DFN2020B；MOSFETs Silicon N-Channel MOS

Applications ?PowerManagementSwitches ?DC-DCConverters Features (1)1.8-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=56mΩ(max)(@VGS=4.5V) RDS(ON)=72mΩ(max)(@VGS=2.5V) RDS(ON)=109mΩ(max)(@VGS=1.8V)