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首頁(yè) >SVF7N65CD>規(guī)格書(shū)列表

零件編號(hào)	下載訂購(gòu)	功能描述/絲印	制造商上傳企業(yè)	LOGO
SVF7N65F	文件：295.96 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
SVF7N65F	文件：323.08 Kbytes Page：10 Pages	N-channeltransistor	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVF7N65RDTR	文件：373.55 Kbytes Page：10 Pages	7A,650VN-CHANNELMOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVF7N65RDTR	文件：382.46 Kbytes Page：10 Pages	7A,650VN-CHANNELMOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVF7N65RDTR	文件：382.47 Kbytes Page：10 Pages	7A,650VN-CHANNELMOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVF7N65RDTR	文件：382.46 Kbytes Page：10 Pages	7A,650VN-CHANNELMOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVF7N65RDTR	文件：382.46 Kbytes Page：10 Pages	7A,650VN-CHANNELMOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVF7N65RDTR	文件：382.47 Kbytes Page：10 Pages	7A,650VN-CHANNELMOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVF7N65RDTR	文件：373.56 Kbytes Page：10 Pages	7A,650VN-CHANNELMOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN
SVF7N65RDTR	文件：373.55 Kbytes Page：10 Pages	7A,650VN-CHANNELMOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,	SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司	SILAN

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