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TM541S-L

TO-220F5ATriac

■Features ●Repetitivepeakoff-statevoltage:VDRM=400,600V ●RMSon-statecurrent:IT(RMS)=5A ●Gatetriggercurrent:IGT=20mAmax(MODE,,) ●Isolationvoltage:VISO=1500V(50HzSinewave,RMS) ●ULapprovedtypeavailable

SankenSanken electric

三墾三墾電氣株式會社

TM541S-R

TO-220F5ATriac

3-2Triacs Thyristors

SankenSanken electric

三墾三墾電氣株式會社

TPMC541

32/16Single-Endedor16/8DifferentialA/DChannels

TheTPMC541isastandardsingle-wide32bit33MHzPCI MezzanineCard(PMC)providing ?upto32/16single-endedor16/8differential16bit bipolaranaloginputchannels, ?8/4single-endedsimultaneousupdate16bit unipolar/bipolaranalogoutputchannelsand ?8tristatecapable5V-toleran

TEWS

TEWS Technologies GmbH

TPMC541-DOC

32/16Single-Endedor16/8DifferentialA/DChannels

TheTPMC541isastandardsingle-wide32bit33MHzPCI MezzanineCard(PMC)providing ?upto32/16single-endedor16/8differential16bit bipolaranaloginputchannels, ?8/4single-endedsimultaneousupdate16bit unipolar/bipolaranalogoutputchannelsand ?8tristatecapable5V-toleran

TEWS

TEWS Technologies GmbH

VDD541LCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD541LNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD541MCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD541MNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD541SCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD541SNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

技術(shù)參數(shù)

  • Classifacation：

    Complex type

  • Device Type：

    SRC1210×2

  • R1 [K?]：

    4.7

  • VO [V]：

    50

  • IO[mA]：

    100

  • PD [?]：

    200

  • G1[hFE]_Min：

    120

  • G1[hFE]_VO [V]：

    5

  • G1[hFE]_IO[mA]：

    1

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更多SUR541J供應(yīng)商 更新時間2025-7-28 17:55:00

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