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STY60NM50

N-CHANNEL 500V - 0.045ohm - 60A Max247 Zener-Protected MDmesh??ower MOSFET

DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof

STY60NM50

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.05Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STY60NM50

N溝道500V - 0.045 Ohm - 60A Max247(TM) 有齊納管保護的MDmesh(TM) 功率MOSFET; ? INDUSTRYS LOWEST ON-RESISTANCE \n? TIGHT PROCESS CONTROL \n? TYPICAL RDS(on) = 0.045 \n? IMPROVED ESD CAPABILITY \n? HIGH dv/dt AND AVALANCHE CAPABILITIES \n? LOW GATE INPUT RESISTANCE \n? LOW INPUT CAPACITANCE AND GATE CHARGE;

The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Companys PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitions products. \n\n

STW60NM50N

iscN-ChannelMOSFETTransistor

STW60NM50N

N-channel500V,0.035廓,68A,MDmesh??IIPowerMOSFETinaTO-247package