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STW24N60DM2

絲?。?a target="_blank" title="Marking" href="/24n60dm2/marking.html">24N60DM2；Package：TO-247；N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

Description TheseFDmeshIIPlus?lowQgPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworld

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW24N60DM2

N溝道600 V、0.175 Ohm典型值、18 A MDmesh DM2功率MOSFET，TO-247封裝; ? Extremely low gate charge and input capacitance \n? Lower RDS(on)x area vs previous generation \n? Low gate input resistance \n? 100% avalanche tested \n? Zener-protected \n? Extremely high dv/dt and avalanche capabilities;

These FDmesh II Plus? low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.\n\n

STSTMicroelectronics

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STB24N60DM2

N-channel600V,0.175(ohm)typ.,18AFDmeshIIPluslowQgPowerMOSFETsinD2PAK,TO-220andTO-247packages

Description TheseFDmeshIIPlus?lowQgPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworld

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF24N60DM2

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

STF24N60DM2

Extremelyhighdv/dtruggedness

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL24N60DM2

N-channel600V,0.195(ohm)typ.,15AMDmeshDM2PowerMOSFETinaPowerFLAT8x8HVpackage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP24N60DM2

N-channel600V,0.175(ohm)typ.,18AFDmeshIIPluslowQgPowerMOSFETsinD2PAK,TO-220andTO-247packages

Description TheseFDmeshIIPlus?lowQgPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworld

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

技術(shù)參數(shù)

  • Package：

    TO-247

  • Grade：

    Industrial

  • VDSS(V)：

    600

  • RDS(on)_max(@ VGS=10V)(Ω)：

    0.2

  • Drain Current (Dc)_max(A)：

    18

  • PTOT_max(W)：

    150

  • Qg_typ(nC)：

    29

  • Features：

    Fast recovery diode

  • Reverse Recovery Time_typ(ns)：

    155

  • Qrr_typ(nC)：

    956

  • Peak Reverse Current_nom(A)：

    12.5

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
ST/意法
24+
N/A
8600
正品原裝,正規(guī)渠道,免費(fèi)送樣。聯(lián)系QQ:1479738171
 詢價
ST
24+
TO-247
5000
只做原裝公司現(xiàn)貨
 詢價
ST
20+
TO-247
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
ST/意法
23+
NA
12730
原裝正品代理渠道價格優(yōu)勢
 詢價
ST(意法半導(dǎo)體)
2447
TO-247-3
105000
30個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
STM
1809+
TO-247
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價
22+
NA
283
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
ST
23+
TO-3P
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多STW24N60DM2供應(yīng)商 更新時間2025-7-29 14:01:00

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