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TBN6301U

SiNPNTransistor

□Features -Highgainbandwidthproduct fT=6GHzatVCE=3V,IC=10mA fT=7.5GHzatVCE=5V,IC=20mA -Highpowergain |S21|2=9dBatVCE=3V,IC=10mA,f=1GHz -Lownoisefigure NF=1.4dBatVCE=3V,IC=10mA,f=1GHz □Applications -VHFandUHF

TD6301AN

STATICDRIVERFORLED/LCDRECEIVINGFREQUENCYDISPLAY

TD6301AP/ANisastaticdriverforareceiving frequencydigitaldisplaydevelopedforTOSHIBA digitaltuningsystem,DTS-6andDTS-8. Thisunitlatchesserialdatatransferredinone cycleonlyattimeofstationselectingoperation fromthesystemcontroller,andstaticallydisplays theda

TD6301AP

STATICDRIVERFORLED/LCDRECEIVINGFREQUENCYDISPLAY

TD6301AP/ANisastaticdriverforareceiving frequencydigitaldisplaydevelopedforTOSHIBA digitaltuningsystem,DTS-6andDTS-8. Thisunitlatchesserialdatatransferredinone cycleonlyattimeofstationselectingoperation fromthesystemcontroller,andstaticallydisplays theda

TFDU6301

FastInfraredTransceiverModule(FIR,4Mbit/s)for2.4Vto3.6VOperationandLow-VoltageLogic(1.8V)

THN6301

NPNSiGeRFTRANSISTOR

THN6301E

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.1dBatf=1GHz,VCE=8V,IC=5mA oHighPowerGain MAG=18dBatf=1GHz,VCE=8V,IC=15mA oHighTransitionFrequency fT=10GHzatVCE=8V,IC=15mA □Application LNAandwidebandamplifieruptoGHzrange

THN6301E

NPNSiGeRFTRANSISTOR

THN6301KF

NPNSiGeRFTRANSISTOR

THN6301KF

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.1dBatf=1GHz,VCE=8V,IC=5mA oHighPowerGain MAG=18dBatf=1GHz,VCE=8V,IC=15mA oHighTransitionFrequency fT=10GHzatVCE=8V,IC=15mA □Application LNAandwidebandamplifieruptoGHzrange

THN6301S

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.1dBatf=1GHz,VCE=8V,IC=5mA oHighPowerGain MAG=18dBatf=1GHz,VCE=8V,IC=15mA oHighTransitionFrequency fT=10GHzatVCE=8V,IC=15mA □Application LNAandwidebandamplifieruptoGHzrange