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STP17N80K5

Marking：17N80K5；Package：TO-220；N-channel 800 V, 0.29 Ω typ., 14 A MDmesh? K5 Power MOSFET in a TO-220 package

Features ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh?K5 technolog

STP17N80K5

N溝道800 V、0.29 Ohm典型值、14 A MDmesh K5功率MOSFET，TO-220封裝; ? Industry’s lowest RDS(on) x area \n? Industry’s best FoM (figure of merit) \n? Ultra-low gate charge \n? 100% avalanche tested \n? Zener-protected;

This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. \n\n

STB17N80K5

N-channel800V,0.29Ωtyp.,14AMDmesh?K5PowerMOSFETinaD2PAKpackage

Features ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh?K5 technolog

STF17N80K5

N-channel800V,0.29Ωtyp.,14AMDmesh?K5PowerMOSFETinaTO-220FPpackage

Features ?Industry’slowestRDS(on)xarea ?Industry’sbestfigureofmerit(FoM) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh?K5 technolog