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STO33N60M6

N溝道600 V、105 mOhm典型值、25 A MDmesh M6功率MOSFET，TO-LL封裝; ? Reduced switching losses \n? Lower RDS(on) per area vs previous generation \n? Low gate input resistance \n? 100% avalanche tested \n? Zener-protected \n? Excellent switching performance thanks to the extra driving source pin;

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.\n\n

STO33N60M6

絲?。?a target="_blank" title="Marking" href="/33n60m6/marking.html">33N60M6；Package：TO-LLtypeA；N-channel 600 V, 105 m廓 typ., 25 A, MDmesh M6 Power MOSFET in a TO??L package

STF33N60M6

N-channel600V,105mtyp.,25A,MDmesh?M6PowerMOSFETinaTO-220FPpackage

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STI33N60M6

N-channel600V,105mtyp.,25A,MDmeshM6PowerMOSFETinanI2PAKpackage

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

STL33N60M6

N-channel600V,0.115typ.,21AMDmeshTMM6PowerMOSFETinaPowerFLATTM8x8HVpackage

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STP33N60M6

N-channel600V,105mtyp.,25A,MDmesh?M6PowerMOSFETinaTO-220package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmeshTMM6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyo

STW33N60M6

N-channel600V,105mtyp.,25A,MDmeshTMM6PowerMOSFETinaTO-247package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof