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STL15N60DM6

N-channel 600 V, 295 m typ., 8.5 A, MDmesh DM6 Power MOSFET in a PowerFLAT 5x6 HV package

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STL15N60DM6

N-channel 600 V, 295 mOhm typ., 8.5 A MDmesh DM6 Power MOSFET in PowerFLAT 8x8 HV package; ? Fast-recovery body diode\n? Lower RDS(on) per area vs previous generation\n? Low gate charge, input capacitance and resistance\n? 100% avalanche tested\n? Extremely high dv/dt ruggedness\n? Zener-protected;

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.\n 主要特性\nFast-recovery body diodeLower RDS(on) per area vs previous generationLow gate charge, input capacitance and resistance100% avalanche testedExtremely high dv/dt ruggednessZener-protected

15N60DM6

N-channel600V,295mtyp.,8.5A,MDmeshDM6PowerMOSFETinaPowerFLAT5x6HVpackage

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STD15N60DM6

N-channel600V,286m廓typ.,12AMDmeshDM6PowerMOSFETinaDPAKpackage

STL210N4F7

ST
DFN5X6

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