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STIPN1M50-H

SLLIMM-nano small low-loss intelligent molded module IPM, 3-phase inverter, 1 A, 3.6 Ohm max., 500 V MOSFET; ? IPM 1 A, 500 V, RDS(on)= 3.6 Ω, 3-phase MOSFET inverter bridge includingcontrol ICs for gate driving\n? Optimized for low electromagnetic interference\n? 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down/pull-upresistors\n? Undervoltage lockout\n? Internal bootstrap diode\n? Interlocking function? Smart shutdown function\n? Comparator for fault protection against overtemperature and overcurrent\n? Op-amp for advanced current sensing\n? Optimized pinout for easy board layout\n? Up to ±2 kV ESD protection (HBM C = 100 pF, R = 1.5 kΩ);

This SLLIMM (small low-loss intelligent molded module) nano provides a compact, highperformance AC motor drive in a simple, rugged design. It is composed of six MOSFETs andthree half-bridge HVICs for gate driving, providing low electromagnetic interference(EMI) characteristics with optimized switching speed. The package is optimized forthermal performance and compactness in built-in motor applications, or other low powerapplications where assembly space is limited. This IPM includes an operationalamplifier, completely uncommitted, and a comparator that can be used to design a fastand efficient protection circuit. SLLIMM? is a trademark of STMicroelectronics.\n \n

STIPN1M50-H

3-phase inverters for small power motor drives

STIPN1M50-H

Package：26-PowerDIP 模塊（0.846"，21.48mm）；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 功率驅(qū)動(dòng)器模塊 描述：SLLIMM-NANO SMALL LOW-LOSS INTEL

STIPN1M50T-H

3-phaseinvertersforsmallpowermotordrives

STIPN1M50T-H

SLLIMM-nanoIPM,3-phaseinverter,1A,3.6Ωmax.,500VMOSFET

Description ThisSLLIMM(smalllow-lossintelligentmoldedmodule)nanoprovidesacompact, high-performanceACmotordriveinasimple,ruggeddesign.Itiscomposedofsix MOSFETsandthreehalf-bridgeHVICsforgatedriving,providinglow electromagneticinterference(EMI)characteristicsw

STIPNS1M50SDT-H

SLLIMM-nanoIPM,3-phaseinverter,1A,3.6Ωmax.,500VMOSFET

Features ?IPM1A,500V,RDS(on)=3.6Ω,3-phaseMOSFETinverterbridgeincluding controlICsforgatedriving ?Optimizedforlowelectromagneticinterference ?3.3V,5V,15VCMOS/TTLinputcomparatorswithhysteresisandpull-down/ pull-upresistors ?Undervoltagelockout ?Internal