首頁>STI57N65M5>規(guī)格書詳情
STI57N65M5中文資料意法半導體數據手冊PDF規(guī)格書
STI57N65M5規(guī)格書詳情
描述 Description
These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
■ Worldwide best RDS(on)*area amongst the silicon based devices
■ Higher VDSS rating, high dv/dt capability
■ Excellent switching performance
■ Easy to drive, 100 avalanche tested
Applications
■ Switching applications
產品屬性
- 型號：
STI57N65M5
- 功能描述：
MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
N |
30000 |
十七年VIP會員,誠信經營，一手貨源，原裝正品可零售！ |
詢價 | ||
ST/意法 |
25+ |
TO-262 |
32360 |
ST/意法全新特價STI57N65M5即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
ST/意法半導體 |
24+ |
TO-262-3 |
16900 |
原裝，正品 |
詢價 | ||
ST/意法半導體 |
21+ |
TO-262-3 |
8860 |
原裝現貨,實單價優(yōu) |
詢價 | ||
ST/意法半導體 |
24+ |
TO-262-3 |
6000 |
全新原裝深圳倉庫現貨有單必成 |
詢價 | ||
ST/意法半導體 |
21+ |
TO-262-3 |
8860 |
只做原裝,質量保證 |
詢價 | ||
ST/意法 |
2223+ |
TO-262 |
26800 |
只做原裝正品假一賠十為客戶做到零風險 |
詢價 | ||
ST/意法半導體 |
24+ |
TO-262-3 |
10000 |
十年沉淀唯有原裝 |
詢價 | ||
ST/意法半導體 |
23+ |
TO-262-3 |
12700 |
買原裝認準中賽美 |
詢價 | ||
ST/意法 |
24+ |
TO-262 |
47186 |
鄭重承諾只做原裝進口現貨 |
詢價 |
