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STGD10NC60H

N-channel 10 A, 600 V, DPAK very fast PowerMESH(TM) IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The suffix \\\"H\\\" identifies a family optimized for high frequency applications in order to achieve very hig; Low on-voltage drop V\ncesat\nLow C\nRES/C\nIES ratio (no cross-conduction susceptibility)\n;

STGD10NC60H

N-channel 10A - 600V - DPAK Very fast PowerMESH??IGBT

STGD10NC60HDT4

絲印：GD10NC60HD；Package：DPAK；600 V - 10 A - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Lowon-voltagedrop(VCE(sat)) ■LowCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecov

STGD10NC60HDT4

600 V - 10 A - very fast IGBT

STGD10NC60HDT4

Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 20A 62W D2PAK

STGD10NC60HT4

Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 20A 60W DPAK