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STGB10H60DF

絲印：GB10H60DF；Package：D2PAK；Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB10H60DF

600 V、10 A高速溝槽柵場(chǎng)截止H系列IGBT; ? High speed switching \n? Tight parameters distribution \n? Safe paralleling \n? Low thermal resistance \n? Short-circuit rated \n? Ultrafast soft recovery antiparallel diode;

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.\n\n

STSTMicroelectronics

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STGF10H60DF

Trenchgatefield-stopIGBT,Hseries600V,10Ahighspeed

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10H60DF

Trenchgatefield-stopIGBT,Hseries600V,10Ahighspeed

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STPS10H60SF

60VpowerSchottkyrectifier

Features ?Lowprofiledesign–packagetypicalheightof1.1mmtyp. ?Wettableflanksforautomaticvisualinspection ?Highjunctiontemperaturecapability ?LowLeakagecurrent ?Avalanchecapability ?ECOPACK?2compliant Applications ?Set-topbox ?Batterycharger ?DC/DCconve

STMICROELECTRONICSSTMicroelectronics

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技術(shù)參數(shù)

  • Package：

    D2PAK

  • Grade：

    Industrial

  • VCES_max(V)：

    600

  • PTOT_max(W)：

    115

  • Freewheeling diode：

    true

  • IC_max(@ Tc=100°C)(A)：

    10

  • IC_max(@ Tc=25°C)(A)：

    20

  • IF_max(@ Tc=100°C)(A)：

    10

  • IF_max(@ Tc=25°C)(A)：

    20

  • VCE(sat)_typ(V)：

    1.5

  • VF_typ(V)：

    1.7

  • Qg_typ(nC)：

    57

  • Eon_typ(mJ)：

    0.08

  • Eoff_typ(mJ)：

    0.14

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
23+
TO-263
121000
原裝正品!假一罰十!
 詢價(jià)
ST/意法半導(dǎo)體
22+
D2PAK
6006
原裝正品現(xiàn)貨 可開(kāi)增值稅發(fā)票
 詢價(jià)
ST
23+
D2PAK
12500
ST系列在售,可接長(zhǎng)單
 詢價(jià)
ST/意法
2410+
TO-263
90
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價(jià)
ST
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
STMicroelectronics
24+
NA
3391
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
ST
2447
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
STM
1809+
TO-263
1675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
22+
NA
3000
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更多STGB10H60DF供應(yīng)商 更新時(shí)間2025-7-30 17:02:00

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