STFV4N150中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
STFV4N150規(guī)格書詳情
描述 Description
Using the well consolidated high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
■ 100 avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF and TO-220FH plastic packages
■ Creepage distance path is 5.4 mm (typ.) for TO-3PF
■ Creepage distance path is > 4 mm for TO-220FH
Application
■ Switching applications
產(chǎn)品屬性
- 型號：
STFV4N150
- 功能描述：
MOSFET IGBT
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
NA |
2100 |
原裝正品支持實單 |
詢價 | ||
ST |
22+ |
TO2203 Isolated Tab |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
STMicroelectronics |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
ST |
24+ |
TO-220-3 |
43 |
詢價 | |||
ST/意法半導體 |
23+ |
TO-3PF-3 |
12820 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ST/意法半導體 |
25+ |
TO-3PF-3 |
10000 |
原裝公司現(xiàn)貨 |
詢價 | ||
ST/意法半導體 |
22+ |
TO-3PF-3 |
10000 |
只有原裝,原裝,假一罰十 |
詢價 | ||
STM |
23+ |
TO-3PF (ISOWATT-218FX) |
50000 |
原裝正品 支持實單 |
詢價 | ||
ST/意法半導體 |
21+ |
TO-3PF-3 |
8860 |
原裝現(xiàn)貨,實單價優(yōu) |
詢價 | ||
ST/意法半導體 |
2020+ |
TO-3PF-3 |
7600 |
只做原裝正品,賣元器件不賺錢交個朋友 |
詢價 |
