首頁 >STFI7N80K5IC>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Zener-protected Description TheseN-channelZener-protectedPowerMOSFETsaredesignedusingST’srevolutionaryavalanche-ruggedveryhighvoltageSuperMESH?5technology,basedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistance,andultra-lowgatechargeforapp | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Ultralowgatecharge Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Ultralowgatecharge Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Ultralowgatecharge Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhighefficie | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Zener-protected Description TheseN-channelZener-protectedPowerMOSFETsaredesignedusingST’srevolutionaryavalanche-ruggedveryhighvoltageSuperMESH?5technology,basedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistance,andultra-lowgatechargeforapp | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Zener-protected Description TheseN-channelZener-protectedPowerMOSFETsaredesignedusingST’srevolutionaryavalanche-ruggedveryhighvoltageSuperMESH?5technology,basedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistance,andultra-lowgatechargeforapp | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS |
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