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N-channel 600 V, 0.63 Ohm, 6.5 A MDmesh(TM) II Power MOSFET in a TO-220FP narrow leads package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most ? 100% avalanche tested\n? Low input capacitance and gate charge? Low gate input resistance;

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意法半導(dǎo)體

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TO-3PF

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上傳：深圳市聯(lián)世界科技有限公司

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TO-3PF

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上傳：深圳市智連鑫科技有限公司

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TO-3PF

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上傳：深圳市勵創(chuàng)源科技有限公司

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SOT23-6

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上傳：深圳市創(chuàng)雅恩科技有限公司