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首頁 >STF7N80K5,7N80K5>規(guī)格書列表

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STD7N80K5

Zener-protected

Description TheseN-channelZener-protectedPowerMOSFETsaredesignedusingST’srevolutionaryavalanche-ruggedveryhighvoltageSuperMESH?5technology,basedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistance,andultra-lowgatechargeforapp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD7N80K5

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF7N80K5

Ultralowgatecharge

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFI7N80K5

Ultralowgatecharge

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL7N80K5

Ultralowgatecharge

Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhighefficie

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP7N80K5

Zener-protected

Description TheseN-channelZener-protectedPowerMOSFETsaredesignedusingST’srevolutionaryavalanche-ruggedveryhighvoltageSuperMESH?5technology,basedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistance,andultra-lowgatechargeforapp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU7N80K5

Zener-protected

Description TheseN-channelZener-protectedPowerMOSFETsaredesignedusingST’srevolutionaryavalanche-ruggedveryhighvoltageSuperMESH?5technology,basedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistance,andultra-lowgatechargeforapp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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