首頁(yè) >STD5N52U-VB>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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N-channel525V,1.28ohm,4.4A,DPAK,TO-220FP,I2PAKUltraFASTmeshPowerMOSFET Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingUltraFASTmesh?technology,whichcombinestheadvantagesofreducedonresistance,Zenergateprotectionandveryhighdv/dtcapabilitywithanenhancedfastbody-drainrecoverydiode. Features ■100avalanchetested ■Outst | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel525V,1.25Ωtyp.,4.4A,UltraFASTmesh?PowerMOSFETinaTO-220FPpackage Features Outstandingdv/dtcapability Gatechargeminimized Verylowintrinsiccapacitances VerylowRDS(on) Extremelylowtrr Applications Switchingapplications Description ThisdeviceisN-channelPowerMOSFETdevelopedusingUltraFASTmesh? technology,whichcombinestheadvantage | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N-channel525V,1.28ohm,4.4A,DPAK,TO-220FP,I2PAKUltraFASTmeshPowerMOSFET Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingUltraFASTmesh?technology,whichcombinestheadvantagesofreducedonresistance,Zenergateprotectionandveryhighdv/dtcapabilitywithanenhancedfastbody-drainrecoverydiode. Features ■100avalanchetested ■Outst | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel525V,1.28ohm,4.4A,DPAK,TO-220FP,I2PAKUltraFASTmeshPowerMOSFET Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingUltraFASTmesh?technology,whichcombinestheadvantagesofreducedonresistance,Zenergateprotectionandveryhighdv/dtcapabilitywithanenhancedfastbody-drainrecoverydiode. Features ■100avalanchetested ■Outst | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel525V,1.25Ωtyp.,4.4A,UltraFASTmesh?PowerMOSFETinaTO-220FPpackage Features Outstandingdv/dtcapability Gatechargeminimized Verylowintrinsiccapacitances VerylowRDS(on) Extremelylowtrr Applications Switchingapplications Description ThisdeviceisN-channelPowerMOSFETdevelopedusingUltraFASTmesh? technology,whichcombinestheadvantage | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel525V,1.28ohm,4.4A,DPAK,TO-220FP,I2PAKUltraFASTmeshPowerMOSFET Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingUltraFASTmesh?technology,whichcombinestheadvantagesofreducedonresistance,Zenergateprotectionandveryhighdv/dtcapabilitywithanenhancedfastbody-drainrecoverydiode. Features ■100avalanchetested ■Outst | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
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