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STD13005FC

NPNSiliconPowerTransistor

Features ?Highspeedswitching ?VCEO(sus)=400V ?SuitableforSwitchingRegulatorandMotorControl

AUK

AUK corp

STD13005FC

SWITCHINGREGULATORAPPLICATIONS

SWITCHINGREGULATORAPPLICATIONS Features ?Highspeedswitching ?VCEO(sus)=400V ?SuitableforSwitchingRegulatorandMotorControl

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

STD13005I

NPNSiliconPowerTransistor

SWITCHINGREGULATORAPPLICATIONS Features ?Highspeedswitching ?VCEO(sus)=400V ?SuitableforSwitchingRegulatorandMotorControl

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

STD13005IS

SWITCHINGREGULATORAPPLICATIONS

SWITCHINGREGULATORAPPLICATIONS Features ?Highspeedswitching ?VCEO(sus)=400V ?SuitableforSwitchingRegulatorandMotorControl

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

STD13005IS

SWITCHINGREGULATORAPPLICATIONS

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

STT13005

Highvoltagefast-switchingNPNpowertransistor

Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STT13005D

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=400V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):1.5V(Max)@IC=1.6A APPLICATIONS ·ElectronicBallastFluorescentLighting ·FlybackandForwardSingleTransistor LowPowerConverters

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STT13005D

Highvoltagefast-switchingNPNpowertransistor

Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STT13005D-K

Highvoltagefast-switchingNPNpowertransistor

Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STT13005FP

Highvoltagecapability

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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