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STF11NM60ND

N-channel600V-0.37廓-10A-FDmesh??IIPowerMOSFETI2PAK,TO-220,TO-220FP,IPAK,DPAK

Description ThedeviceisanN-channelFDmesh?IIPowerMOSFETthatbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STF11NM60ND

N-channel600V,0.37廓,10A,FDmesh??IIPowerMOSFETI2PAK,TO-220,TO-220FP,IPAK,DPAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STI11NM60ND

N-channel600V,0.37廓,10A,FDmesh??IIPowerMOSFETI2PAK,TO-220,TO-220FP,IPAK,DPAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STI11NM60ND

N-channel600V-0.37廓-10A-FDmesh??IIPowerMOSFETI2PAK,TO-220,TO-220FP,IPAK,DPAK

Description ThedeviceisanN-channelFDmesh?IIPowerMOSFETthatbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STI11NM60ND

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=6.3A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchinga

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP11NM60

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP11NM60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

STP11NM60

N-channel650VTJmax-0.4OHM-11ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP11NM60

N-CHANNEL600V-0.4ohm-11ATO-220/TO-220FP/D2PAK/I2PAKMDmesh??owerMOSFET

Description TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP11NM60A

N-CHANNEL600V-0.4ohm-11ATO-220/TO-220FP/I2PAKMDmesh??owerMOSFET

DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dt.TheadoptionoftheCompany’sproprietarystriptechniq

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細參數(shù)

  • 型號：

    STD11NM60ND

  • 功能描述：

    MOSFET N-channel 600V, 10A FDMesh II

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
23+
14PBF
6996
只做原裝正品現(xiàn)貨
 詢價
STMicroelectronics Asia Pacifi
25+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
ST
24+
TO252DPAK
8866
詢價
ST
1650+
?
14860
只做原裝進口,假一罰十
 詢價
ST
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
ST
18+
TO-252
41200
原裝正品,現(xiàn)貨特價
 詢價
STMicroelectronics
21+
DPAK
2500
100%進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
STM
23+
TO-252
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
ST
2447
TO-252
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
更多STD11NM60ND供應(yīng)商 更新時間2025-7-25 15:13:00

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