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STB33N60M2

N溝道600 V、0.108 Ohm典型值、26 A MDmesh M2功率MOSFET，D2PAK封裝; ? Extremely low gate charge \n? Excellent output capacitance (COSS) profile \n? 100% avalanche tested \n? Zener-protected;

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. \n\n

STSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB33N60M2

Marking：33N60M2；Package：D2PAK；N-channel 600 V, 0.108 廓 typ., 26 A MDmesh II Plus??low Qg Power MOSFETs in a D2PAK package

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF33N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.125Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF33N60M2

N-channel600V,0.108typ.,26AMDmeshIIPluslowQgPowerMOSFETsinTO-220FP,I2PAK,TO-220andTO-247packages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI33N60M2

N-channel600V,0.108typ.,26AMDmeshIIPluslowQgPowerMOSFETsinTO-220FP,I2PAK,TO-220andTO-247packages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL33N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP33N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.125Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP33N60M2

N-channel600V,0.108typ.,26AMDmeshIIPluslowQgPowerMOSFETsinTO-220FP,I2PAK,TO-220andTO-247packages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW33N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.125Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW33N60M2

N-channel600V,0.108typ.,26AMDmeshIIPluslowQgPowerMOSFETsinTO-220FP,I2PAK,TO-220andTO-247packages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

技術(shù)參數(shù)

  • Package：

    D2PAK

  • Grade：

    Industrial

  • VDSS(V)：

    600

  • RDS(on)_max(@ VGS=10V)(Ω)：

    0.125

  • Drain Current (Dc)_max(A)：

    26

  • PTOT_max(W)：

    190

  • Qg_typ(nC)：

    45.5

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ST
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TSSOP8
6000
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23+
TO263
6996
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ST/意法半導(dǎo)體
22+
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6005
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STM
23+
TO-263-3 (D2PAK)
2000
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ST
24+
QFN
5000
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STM
18+
TO263
85600
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STMicroelectronics
21+
D2PAK
1000
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STM
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TO-263
375
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ST(意法)
23+
NA
20094
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更多STB33N60M2供應(yīng)商 更新時(shí)間2025-7-26 15:50:00

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