SST26WF064CT-104I/TD屬于集成電路（IC）的存儲(chǔ)器。由微芯科技股份有限公司制造生產(chǎn)的SST26WF064CT-104I/TD存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性?xún)煞N，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線(xiàn)、SPI、UFS、Xccela 總線(xiàn)和 1-線(xiàn)。

Product Description

The Serial Quad I/O? (SQI?) family of flash-memory

devices features a six-wire, 4-bit I/O interface that

allows for low-power, high-performance operation in a

low pin-count package. The SST26WF064C also supports

full command-set compatibility to traditional Serial

Peripheral Interface (SPI) protocol. System designs

using SQI flash devices occupy less board space and

ultimately lower system costs.

All members of the 26 Series, SQI family are manufactured

with proprietary, high-performance CMOS Super-

Flash? technology. The split-gate cell design and thickoxide

tunneling injector attain better reliability and manufacturability

compared with alternate approaches.

The SST26WF064C significantly improves performance

and reliability, while lowering power consumption. These

devices write (Program or Erase) with a single power supply

of 1.65-1.95V. The total energy consumed is a function

of the applied voltage, current, and time of application. For

any given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time.

Therefore, the total energy consumed during any Erase or

Program operation is less than alternative flash memory

technologies.

特性 Features

? Single Voltage Read and Write Operations

- 1.65-1.95V

? Serial Interface Architecture

- Mode 0 and Mode 3

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

- Dual-Transfer Rate (DTR) Operation

? High Speed Clock Frequency

- 104 MHz max

- 50 MHz max (DTR)

? Burst Modes

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

? Superior Reliability

- Endurance: 100,000 Cycles (min)

- Greater than 100 years Data Retention

? Low Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby current: 10 μA (typical)

- Deep Power-Down current: 2.5 μA (typical)

? Fast Erase Time

- Sector/Block Erase: 18 ms (typ), 25 ms (max)

- Chip Erase: 35 ms (typ), 50 ms (max)

? Page-Program

- 256 Bytes per page in x1 or x4 mode

? End-of-Write Detection

- Software polling the BUSY bit in status register

? Flexible Erase Capability

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter overlay

blocks

- One 32 KByte top and bottom overlay block

- Uniform 64 KByte overlay blocks

? Write-Suspend

- Suspend Program or Erase operation to access

another block/sector

? Software Reset (RST) mode

? Hardware Reset Pin

? Supports JEDEC-compliant Serial Flash Discoverable

Parameter (SFDP) table

? Software Protection

- Individual-Block Write Protection with permanent

lock-down capability

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

- Read Protection on top and bottom 8 KByte

parameter blocks

? Security ID

- One-Time Programmable (OTP) 2 KByte,

Secure ID

- 64 bit unique, factory pre-programmed identifier

- User-programmable area

? Temperature Range

- Industrial: -40°C to +85°C

? Packages Available

- 8-contact WDFN (6mm x 5mm)

- 8-lead SOIJ (5.28 mm)

- 16-lead SOIC (7.50 mm)

- 24-ball TBGA (8mm x 6mm)

? All devices are RoHS compliant