SST25PF020B-80-4C-SAE-T屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產的SST25PF020B-80-4C-SAE-T存儲器存儲器是集成電路上用作數(shù)據存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Product Description

The 25 series Serial Flash family features a four-wire,

SPI compatible interface that allows for a low pin-count

package which occupies less board space and ultimately

lowers total system costs. The SST25PF020B

devices are enhanced with improved operating frequency

and even lower power consumption.

SST25PF020B SPI serial Flash memories are manufactured

with proprietary, high-performance CMOS

SuperFlash? technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST25PF020B devices significantly improve performance

and reliability, while lowering power consumption.

The devices write (Program or Erase) with a

single power supply of 2.3V-3.6V for SST25PF020B.

The total energy consumed is a function of the applied

voltage, current and time of application. Since for any

given voltage range the SuperFlash technology uses

less current to program and has a shorter erase time,

the total energy consumed during any erase or program

operation is less than alternative Flash memory technologies.

Features

? Single Voltage Read and Write Operations:

- 2.3V-3.6V

? Serial Interface Architecture:

- SPI Compatible: Mode 0 and Mode 3

? High-Speed Clock Frequency:

- 80 MHz (2.7V-3.6V operation)

- 50 MHz (2.3V-2.7V operation)

? Superior Reliability:

- Endurance: 100,000 cycles (typical)

- Greater than 100 years data retention

? Low-Power Consumption:

- Active Read current: 10 mA (typical)

- Standby current: 5 μA (typical)

? Flexible Erase Capability:

- Uniform 4-Kbyte sectors

- Uniform 32-Kbyte overlay blocks

- Uniform 64-Kbyte overlay blocks

? Fast Erase and Byte Program:

- Chip Erase time: 35 ms (typical)

- Sector/Block Erase time: 18 ms (typical)

- Byte Program time: 7 μs (typical)

? Auto Address Increment (AAI) Programming:

- Decrease total chip programming time over

Byte Program operations

? End-of-Write Detection:

- Software polling the BUSY bit in STATUS

register

- Busy Status readout on SO pin in AAI Mode

? Hold Pin (HOLD#):

- Suspends a serial sequence to the memory

without deselecting the device

? Write Protection (WP#):

- Enables/Disables the Lock-Down function of

the STATUS register

? Software Write Protection:

- Write protection through Block Protection bits

in STATUS register

? Temperature Range:

- Commercial: 0°C to +70°C

? All devices are RoHS compliant