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SSM3J132TU

MOSFETsSiliconP-ChannelMOS(U-MOSVI)

Applications ?PowerManagementSwitches Features (1)1.2-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=94mΩ(max)(VGS=-1.2V) RDS(ON)=39mΩ(max)(VGS=-1.5V) RDS(ON)=29mΩ(max)(VGS=-1.8V) RDS(ON)=21mΩ(max)(VGS=-2.5V) RDS(ON)=17mΩ(max)(VGS=-4.5V)

SSM3J132TU

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SSM3J132TU

TOSHIBAField-EffectTransistorSiliconP-ChannelMOSType(U-MOSVI)

○PowerManagementSwitchApplications ?1.2-Vdrive ?LowON-resistance:RDS(ON)=94m?(max)(@VGS=-1.2V) RDS(ON)=39m?(max)(@VGS=-1.5V) RDS(ON)=29m?(max)(@VGS=-1.8V)

SSM3J135TULF(B

Toshiba
UFM-3

SSM3K16CT

TOSHIBA
CST3