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TIP117

DARLINGTON2AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

TIP117

POWERTRANSISTORS(2.0A,60-100V,50W)

TIP117

PNPSILICONPOWERDARLINGTONS

PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications

TIP117

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

TIP117

SiliconPNPDarlingtonPowerTransistors

DESCRIPTION ?WithTO-220Cpackage ?DARLINGTON ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?ComplementtotypeTIP110/111/112 APPLICATIONS ?Forindustrialuse

TIP117

TECHNICALSPECIFICATIONSOFPNPDARLINGTONTRANSISTOR

Description Designedforuseingeneralpurposeamplifierandlow-speedswitchingapplications. Pinning 1=Base 2=Collector 3=Emitter

TIP117

PNPEpitaxialSiliconDarlingtonTransistors

Features ?HighDCCurrentGain:hFE=1000@VCE=4.0V,IC=1.0A(Min.) ?LowCollector-EmitterSaturationVoltage ?ComplementarytoTIP110/111/112 ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatRoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating

TIP117

TO-220-PowerTransistorsandDarlingtons

TIP117

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP110andTIP112aresiliconEpitaxial-BaseNPNtransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-220plasticpackage.Theyareintentedforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP115andTIP117. ■STMicroe

TIP117

EPITAXIALPLANARPNPTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES ?HighDCCurrentGain. :hFE=1000(Min.),＠VCE=-4V,IC=-1A. ?LowCollector-EmitterSaturationVoltage. ?ComplementarytoTIP112.