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800V N-Channel Super-Junction MOSFET Gen-Ⅱ

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.\nThis advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with; ? Multi-Epi process SJ-FET\n? 850V @TJ = 150 ℃\n? Typ. RDS(on) = 0.54Ω\n? Ultra Low Gate Charge (typ. Qg = 17.2nC)\n? 100% avalanche tested\n? Integrated Zener diode for high ESD robustness\n;

Super

超致半導體

SILIKRON
TO-263

SILIKRON

新硅能微電子

上傳：深圳市晨豪科技有限公司

SECOS
SOP-8

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

上傳：深圳市凌旭科技有限公司

JST
N/A

JST

JST集團

上傳：深圳市云泰半導體科技有限公司二部

JST
N/A

JST

JST集團

上傳：深圳權(quán)泰科技有限公司