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600V N-Channel Super-Junction MOSFET Gen-Ⅱ With Fast-Recovery

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.\nThis advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with ? Multi-Epi process SJ-FET\n? Fast-Recovery body diode\n? Extremely Low Reverse Recovery Charge\n? 650V @TJ = 150 ℃\n? Typ. RDS(on) = 80mΩ\n? Ultra Low Gate Charge (typ. Qg = 62.5nC)\n? 100% avalanche tested\n;

Super

超致半導體

SUPER超致
TO-220

SUPER超致

上傳：深圳市樂創(chuàng)天科技有限公司

SUPER超致
TO-220F

SUPER超致

上傳：深圳市樂創(chuàng)天科技有限公司

SILIKRON
TO-220

SILIKRON

新硅能微電子

上傳：深圳市晨豪科技有限公司

SILSKRON
TO220

SILSKRON

上傳：深圳市卓越微芯電子有限公司