SN74CB3T16212DGVR屬于集成電路（IC）的信號(hào)開(kāi)關(guān)多路復(fù)用器解碼器。由美國(guó)德州儀器公司制造生產(chǎn)的SN74CB3T16212DGVR信號(hào)開(kāi)關(guān)，多路復(fù)用器，解碼器邏輯型信號(hào)開(kāi)關(guān)、多路復(fù)用器和編碼器 IC 可用于對(duì)以數(shù)字格式表示數(shù)據(jù)的電信號(hào)進(jìn)行路由和選擇。這些器件與設(shè)計(jì)用于模擬信號(hào)的類(lèi)似產(chǎn)品有所不同，它們保留的信息表示為兩個(gè)電狀態(tài)之一，而不是兩個(gè)外部界限內(nèi)的無(wú)窮變化量。

FEATURES

· Member of the Texas Instruments Widebus?

Family

· Output Voltage Translation Tracks VCC

· Supports Mixed-Mode Signal Operation on All

Data I/O Ports

– 5-V Input Down to 3.3-V Output Level Shift

With 3.3-V VCC

– 5-V/3.3-V Input Down to 2.5-V Output Level

Shift With 2.5-V VCC

· 5-V-Tolerant I/Os With Device Powered Up or

Powered Down

· Bidirectional Data Flow, With Near-Zero

Propagation Delay

· Low ON-State Resistance (ron) Characteristics

(ron = 5 W Typ)

· Low Input/Output Capacitance Minimizes

Loading (Cio(OFF) = 9 pF Typ)

· Data and Control Inputs Provide Undershoot

Clamp Diodes

· Low Power Consumption (ICC = 70 mA Max)

· VCC Operating Range From 2.3 V to 3.6 V

· Data I/Os Support 0-V to 5-V Signaling Levels

(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)

· Control Inputs Can Be Driven by TTL or

5-V/3.3-V CMOS Outputs

· Ioff Supports Partial-Power-Down Mode

Operation

· Latch-Up Performance Exceeds 250 mA Per

JESD 17

· ESD Performance Tested Per JESD 22

– 2000-V Human-Body Model(A114-B, Class II)

– 1000-V Charged-Device Model (C101)

· Supports Digital Applications: Level

Translation, PCI Interface, USB Interface,

Memory Interleaving, and Bus Isolation

· Ideal for Low-Power Portable Equipment

DESCRIPTION/ORDERING INFORMATION

The SN74CB3T16212 is a high-speed TTL-compatible FET bus-exchange switch, with low ON-state resistance

ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data

I/O ports by providing voltage translation that tracks VCC. The SN74CB3T16212 supports systems using 5-V TTL,

3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).