SN74BCT373DWR屬于集成電路（IC）的鎖存器。由美國(guó)德州儀器公司制造生產(chǎn)的SN74BCT373DWR鎖存器鎖存器是類似于觸發(fā)器的基本數(shù)字存儲(chǔ)設(shè)備，但是不同之處在于，在鎖存使能（或類似命名）信號(hào)處于有效邏輯狀態(tài)的任何時(shí)間，保持的邏輯狀態(tài)都可以改變?！巴该鳌辨i存器還允許設(shè)備輸出在鎖存使能信號(hào)有效時(shí)反映輸入的當(dāng)前狀態(tài)，而相反的是，狀態(tài)僅在保持狀態(tài)已固定時(shí)改變。

Operating Voltage Range of 4.5 V to 5.5 V

State-of-the-Art BiCMOS Design

Significantly Reduces ICCZ

Full Parallel Access for Loading

3-State Outputs Drive Bus Lines or Buffer

Memory Address Registers

ESD Protection Exceeds JESD 22

– 2000-V Human-Body Model (A114-A)

description/ordering information

These 8-bit latches feature 3-state outputs designed specifically for driving highly capacitive or relatively

low-impedance loads. They are particularly suitable for implementing buffer registers, I/O ports, bidirectional

bus drivers, and working registers.

The eight latches of the ’BCT373 devices are transparent D-type latches. While the latch-enable (LE) input is

high, the Q outputs follow the data (D) inputs. When the latch enable is taken low, the Q outputs are latched

at the logic levels that were set up at the D inputs.

A buffered output-enable (OE) input can be used to place the eight outputs in either a normal logic state (high

or low logic levels) or the high-impedance state. In the high-impedance state, the outputs neither load nor drive

the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus

lines without interface or pullup components.