? State-of-the-Art BiCMOS Design

Significantly Reduces ICCZ

? ESD Protection Exceeds 2000 V Per

MIL-STD-883C, Method 3015; Exceeds

200 V Using Machine Model (C = 200 pF,

R = 0)

? Designed to Facilitate Incident-Wave

Switching for Line Impedances of 25 W

or Greater

? Distributed VCC and GND Pins Minimize

Noise Generated by the Simultaneous

Switching of Outputs

? Package Options Include Plastic

Small-Outline (DW) Packages, Ceramic

Chip Carriers (FK) and Flatpacks (W), and

Standard Plastic and Ceramic 300-mil DIPs

(JT, NT)

description

These 25-W octal buffers and line drivers are

designed specifically to improve both the

performance and density of 3-state memory

address drivers, clock drivers, and bus-oriented

receivers and transmitters.

These buffers are capable of sinking 188-mA IOL,

which facilitates switching 25-W transmission

lines on the incident wave. The distributed VCC

and GND pins minimize switching noise for more

reliable system operation.

When the output-enable (1OE and 2OE) inputs

are low, the device transmits data from the

A inputs to the Y outputs. When 1OE and 2OE are

high, the outputs are in the high-impedance state.

The SN54BCT25244 is characterized for

operation over the full military temperature range

of –55°C to 125°C. The SN74BCT25244 is

characterized for operation from 0°C to 70°C.