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TDA1307

High-performancebitstreamdigitalfilter

FEATURES ?Multipleformatinputs:I2S,Sony16,18and20-bit ?8-sampleinterpolationerrorconcealment ?Digitalmute,attenuation?12dB ?Digitalaudiooutputfunction(biphase-markencoded)accordingtoIEC958 ?Digitalsilencedetection(output) ?Digitalde-emphasis(sele

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

TGA1307

KaBandLowNoiseAmplifier

KeyFeaturesandPerformance ?0.25umpHEMTTechnology ?23-29GHzFrequencyRange ?3.1dBNominalNoiseFigure28GHz ?17dBNominalGain ?OTOI>22dBm ?5V,50mASelf-Bias PrimaryApplications ?Point-to-PointRadio ?Point-to-MultipointCommunications

TriQuint

TriQuint Semiconductor

TGA1307-EPU

KaBandLowNoiseAmplifier

KeyFeaturesandPerformance ?0.25umpHEMTTechnology ?23-29GHzFrequencyRange ?3.1dBNominalNoiseFigure28GHz ?17dBNominalGain ?OTOI>22dBm ?5V,50mASelf-Bias PrimaryApplications ?Point-to-PointRadio ?Point-to-MultipointCommunications

TriQuint

TriQuint Semiconductor

TZ1307A

HC49USDIP17.664MHzCrystalUnit

Features: SurfaceMountSeamWeldPackage GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49UScrystalunitforuseinwirelesstelecommunicationsdevices

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

VB1307N

N-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBA1307

N-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronous RectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBA1307A

N-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronous RectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBC1307

N-Channel30V(D-S)MOSFET

FEATURES ?TrenchFET??PowerMOSFET ?100%RgTested ?100%UISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?NotebookSystemPower ?LowCurrentDC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBE1307

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBE1307

N-Channel30-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

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