描述 Description

description
The SMJ28F010B is a 1048576-bit, programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available in 10000 program/erase-endurance-cycle version.
The SMJ28F010B flash memory is offered in a 32-lead ceramic 600-mil side-braze dual in-line package (DIP) (JDD suffix) and a leadless ceramic chip carrier (FE suffix).
? Organization . . . 131072 × 8-Bit Flash Memory
? Pin Compatible With Existing 1M-bit EPROMs
? High-Reliability MIL-PRF-38535 Processing
? VCC Tolerance ±10%
? All Inputs/Outputs TTL Compatible
? Maximum Access/Minimum Cycle Time
?? 28F010B-12 120 ns
?? ’28F010B-15 150 ns
?? ’28F010B-20 200 ns
? Industry-Standard Programming Algorithm
? 10000 Program/Erase-Cycle
? Latchup Immunity of 250 mA on All Input and Output Lines
? Low Power Dissipation (VCC = 5.5 V)
?? –Active Write . . . 55 mW
?? –Active Read . . . 165 mW
?? –Electrical Erase . . . 82.5 mW
?? –Standby . . . 0.55 mW (CMOS-Input Levels)
? Military Temperature Range
?? – 55°C to 125°C