首頁 >SM5C1008CW>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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Lowactivepower GENERALDESCRIPTION TheAS5C1008isahighspeed,lowpower,128Kby8-bitruggedizedplastic(COTS)CMOSStaticRAM.Itisfabricatedusinghighperformance,CMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas15ns(Max) | MICROSS Micross Components | MICROSS | ||
128Kx8SRAMRUGGEDIZEDPLASTICHIGHSPEEDSRAM | AUSTIN Austin Semiconductor | AUSTIN | ||
128Kx8SRAMRUGGEDIZEDPLASTICHIGHSPEEDSRAM GENERALDESCRIPTION TheASIAS5C1008isahighspeed,lowpower,128Kby8-bitruggedizedplastic(COTS)CMOSStaticRAM.Itisfabricatedusinghighperformance,CMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas15ns( | AUSTIN Austin Semiconductor | AUSTIN | ||
128Kx8SRAMWITHDUALCHIPENABLEAVAILABLEASMILITARYSPECIFICATIONS GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:12,15,20,25,35,45,55and70ns ?BatteryBackup:2Vdataretentio | AUSTIN Austin Semiconductor | AUSTIN | ||
128Kx8SRAMWITHDUALCHIPENABLEULTRALOWPOWER GENERALDESCRIPTION TheMT5C1008SRAMemployshigh-speed,lowpowerCMOSdesignsusingafour-transistormemorycell,andarefabricatedusingdouble-layermetal,double-layerpolysilicontechnology. FEATURES ?HighSpeed:12,15,20,25,35,45,55and70ns ?BatteryBackup:2Vdataretentio | AUSTIN Austin Semiconductor | AUSTIN |
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